KSH112TM
| ： | KSH112TM |
|---|---|
| ： | Single BJT Transistors |
| ： | ON Semiconductor |
| ： | NPN - Darlingto |
| ： | - |
| ： | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ： | 18142 |
| ： | YES |
KSH112TM
:
KSH112TM
Manufacturer:
ON Semiconductor
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Encapsulation:
-
Batch number:
Quantity:
18142
Pricing(UCD):
| TYPE | DESCRIPTION |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Factory Lead Time | 9 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Current Rating | 2A |
| Base Part Number | KSH112 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A 3V |
| Current - Collector Cutoff (Max) | 20μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 25MHz |
| Collector Emitter Saturation Voltage | 2V |
| Max Breakdown Voltage | 100V |
| Frequency - Transition | 25MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
 | |
| 原装正品 | 每颗芯片都来自原厂 |
| |
| 主要产品 | 只生厂材料 |
| |
| 现货库存 | 只生产原材料 |
| |
| 原装库存 | Bom 单 | 价格实惠 |
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